Merging the advantages of copper-clip packaging with wide bandgap semiconductors. Nexperia has unveiled its latest innovation, Gallium nitride (GaN) field-effect transistor (FET) devices, featuring cutting-edge high-voltage GaN high-electron-mobility transistor (HEMT or HEM FET)technology and housed in proprietary copper-clip CCPAK surface mount packaging. This groundbreaking technology is now available to designers working on industrial and renewable […]
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